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Determination of trapping parameters of Tl2In2S3Se layered single crystal by thermoluminescence

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dc.contributor.author Güler, İpek
dc.contributor.author Gasanly, Nizami
dc.date.accessioned 2018-10-04T11:48:19Z
dc.date.available 2018-10-04T11:48:19Z
dc.date.issued 2018-04
dc.identifier.citation Güler, İ., Gasanly, N. (2018). Determination of trapping parameters of Tl2In2S3Se layered single crystal by thermoluminescence. Crystal Research And Technology, 53(4). http://dx.doi.org/ 10.1002/crat.201700134 tr_TR
dc.identifier.issn 0232-1300
dc.identifier.uri http://hdl.handle.net/20.500.12416/1830
dc.description.abstract Thermoluminescence (TL) measurements are performed to evaluate the trap states in Tl2In2S3Se layered single crystals. TL experiments are conducted with varying temperature from 10 to 300 K and warming rates from 0.2 to 1.0 K s(-1). From the analysis of both initial rise and curve fitting methods, the activation energy of the traps is obtained as 23 meV. The Chen's method is also used to find activation energy. By means of this technique, the activation energy of the TL glow curve is calculated as 25 meV. From both Chen's method and curve fitting method, the existence of mixed order of kinetics in Tl2In2S3Se crystal is found. The cross section to capture of the trap center is found out from the results of curve fitting method. The trap distribution of the crystals is investigated with different temperatures of illumination at a constant warming rate of 0.8 K s(-1). The temperatures of illumination change from 10 to 22 K. As a result of the increase in temperatures of illumination, the peak maximum values move to higher temperatures and intensity of the TL curves decreases. This behavior shows us that quasicontinuous traps distribution is present in Tl2In2S3Se layered single crystals. tr_TR
dc.language.iso eng tr_TR
dc.publisher Wiley tr_TR
dc.relation.isversionof 10.1002/crat.201700134 tr_TR
dc.rights info:eu-repo/semantics/closedAccess tr_TR
dc.subject Defects tr_TR
dc.subject Semiconductors tr_TR
dc.subject Thermoluminescence tr_TR
dc.title Determination of trapping parameters of Tl2In2S3Se layered single crystal by thermoluminescence tr_TR
dc.type article tr_TR
dc.relation.journal Crystal Research And Technology tr_TR
dc.contributor.authorID 101531 tr_TR
dc.identifier.volume 53 tr_TR
dc.identifier.issue 4 tr_TR
dc.contributor.department Çankaya Üniversitesi, Ortak Dersler Bölümü, Temel Mühendislik ABD Fizik Bilim Dalı tr_TR


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