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Temperature-dependent absorption edge and photoconductivity of Tl 2In2S3Se layered single crystals

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dc.contributor.author Güler, İpek
dc.contributor.author Ambrico, M.
dc.contributor.author Ligonzo, T.
dc.contributor.author Gasanly, N.M.
dc.date.accessioned 2023-01-19T12:49:17Z
dc.date.available 2023-01-19T12:49:17Z
dc.date.issued 2013-02-15
dc.identifier.citation Güler, İpek...et al. (2013). "Temperature-dependent absorption edge and photoconductivity of Tl 2In2S3Se layered single crystals", Journal of Alloys and Compounds, Vol. 550, pp. 471-474. tr_TR
dc.identifier.issn 0925-8388
dc.identifier.uri http://hdl.handle.net/20.500.12416/6091
dc.description.abstract Temperature variation of indirect band gap of Tl2In 2S3Se layered single crystals were obtained by means of absorption and photoconductivity measurements. The temperature coefficient of -7.1 × 10-4 eV/K from absorption measurements in the temperature range of 10-300 K in the wavelength range of 520-1100 nm and -5.0 × 10-4 eV/K from PC measurements in the temperature range of 132-291 K in the wavelength range of 443-620 nm upon supplying voltage V = 80 V were obtained. From the analysis of dark conductivity measurements in the temperature range of 150-300 K, conductivity activation energy was obtained as 0.51 eV above 242 K. The degree of the disorder, the density of localized states near Fermi level, the average hopping distance and average hopping energy of Tl2In2S3Se crystals were found as, 1.9 × 105 K, Nf = 4 × 1020 cm -3eV-1, 29.1 Å and 24.2 meV in the temperature range of 171-237 K, respectively. Activation energy of hopping conductivity at T = 171 K was obtained as 41.3 meV and the concentration of trapping states was found as 1.6 × 1019 cm-3. tr_TR
dc.language.iso eng tr_TR
dc.relation.isversionof 10.1016/j.jallcom.2012.10.133 tr_TR
dc.rights info:eu-repo/semantics/closedAccess tr_TR
dc.subject Absorption tr_TR
dc.subject Layered Single Crystals tr_TR
dc.subject Photoconductivity tr_TR
dc.title Temperature-dependent absorption edge and photoconductivity of Tl 2In2S3Se layered single crystals tr_TR
dc.type article tr_TR
dc.relation.journal Journal of Alloys and Compounds tr_TR
dc.contributor.authorID 101531 tr_TR
dc.identifier.volume 550 tr_TR
dc.identifier.startpage 471 tr_TR
dc.identifier.endpage 474 tr_TR
dc.contributor.department Çankaya Üniversitesi, Ortak Dersler, Fizik Bilim Dalı tr_TR


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