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Characterization of N Rich-Silicon Nitride Thin Films Deposited by PECVD

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dc.contributor.author Güler, İpek
dc.date.accessioned 2023-11-28T13:11:38Z
dc.date.available 2023-11-28T13:11:38Z
dc.date.issued 2023-04-01
dc.identifier.citation Güler, İ. (2023). "Characterization of N Rich-Silicon Nitride Thin Films Deposited by PECVD", ECS Journal Of Solid State Science And Technology, Vol.12, No.4. tr_TR
dc.identifier.issn 2162-8769
dc.identifier.uri http://hdl.handle.net/20.500.12416/6679
dc.description.abstract Silicon nitride thin films are very important for their possible use in semiconductor industry and electronic applications. Changing the deposition parameters, silicon nitrides which have many varying optical properties can be produced. In this work, silicon nitride (SiNx) thin films were deposited on silicon substrates using Plasma enhanced chemical vapor deposition (PECVD) technique. The silane (SiH4) and ammonia (NH3) were used as reactant gases. Using these reactant gases, nitrogen (N) rich SiNx films were obtained. In order to get information about absorption and bond types in the films, films were analyzed by the help of Fourier transform infrared spectroscopy (FTIR) was performed. The refractive index, extinction coefficient and band gap energy of the films were changed from 1.86, 0 and 5.38 eV to 2.05, 0.0048 and 4.26 eV, respectively. Using the refractive index, composition of the films were estimated that is [N]/[Si] ratio of the films varied from 1.38 to 1.62. For possible applications of the SiNx films, learning the origin of the light-emission of the films is very important so the photoluminescence (PL) measurements were also used to see the luminescent of the SiNx films which is related to the electronic transitions between the K-center level and the conduction band tail states. tr_TR
dc.language.iso eng tr_TR
dc.relation.isversionof 10.1149/2162-8777/acc971 tr_TR
dc.rights info:eu-repo/semantics/closedAccess tr_TR
dc.subject Hot-Wire CVD tr_TR
dc.subject Optical-Properties tr_TR
dc.subject SI tr_TR
dc.subject Photoluminescence tr_TR
dc.subject Defects tr_TR
dc.subject Luminescence tr_TR
dc.subject Hydrogen States tr_TR
dc.subject Sinxh tr_TR
dc.title Characterization of N Rich-Silicon Nitride Thin Films Deposited by PECVD tr_TR
dc.type article tr_TR
dc.relation.journal ECS Journal Of Solid State Science And Technology tr_TR
dc.contributor.authorID 101531 tr_TR
dc.identifier.volume 12 tr_TR
dc.identifier.issue 4 tr_TR
dc.contributor.department Çankaya Üniversitesi, Ortak Dersler, Fizik Bilim Dalı tr_TR


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