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Squeezed state generation using cryogenic InP HEMT nonlinearity

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dc.contributor.author Salmanogli, Ahmad
dc.date.accessioned 2024-01-26T07:54:36Z
dc.date.available 2024-01-26T07:54:36Z
dc.date.issued 2023-05
dc.identifier.citation Salmanogli, A. (2023). "Squeezed state generation using cryogenic InP HEMT nonlinearity", Journal of Semiconductors, Vol.44, No.5. tr_TR
dc.identifier.issn 16744926
dc.identifier.uri http://hdl.handle.net/20.500.12416/6998
dc.description.abstract This study focuses on generating and manipulating squeezed states with two external oscillators coupled by an InP HEMT operating at cryogenic temperatures. First, the small-signal nonlinear model of the transistor at high frequency at 5 K is analyzed using quantum theory, and the related Lagrangian is theoretically derived. Subsequently, the total quantum Hamiltonian of the system is derived using Legendre transformation. The Hamiltonian of the system includes linear and nonlinear terms by which the effects on the time evolution of the states are studied. The main result shows that the squeezed state can be generated owing to the transistor’s nonlinearity; more importantly, it can be manipulated by some specific terms introduced in the nonlinear Hamiltonian. In fact, the nonlinearity of the transistors induces some effects, such as capacitance, inductance, and second-order transconductance, by which the properties of the external oscillators are changed. These changes may lead to squeezing or manipulating the parameters related to squeezing in the oscillators. In addition, it is theoretically derived that the circuit can generate two-mode squeezing. Finally, second-order correlation (photon counting statistics) is studied, and the results demonstrate that the designed circuit exhibits antibunching, where the quadrature operator shows squeezing behavior. tr_TR
dc.language.iso eng tr_TR
dc.relation.isversionof 10.1088/1674-4926/44/5/052901 tr_TR
dc.rights info:eu-repo/semantics/closedAccess tr_TR
dc.subject Cryogenic Low Noise Amplifier tr_TR
dc.subject InP HEMT tr_TR
dc.subject Quantum Theory tr_TR
dc.subject Squeezed State tr_TR
dc.title Squeezed state generation using cryogenic InP HEMT nonlinearity tr_TR
dc.type article tr_TR
dc.relation.journal Journal of Semiconductors tr_TR
dc.identifier.volume 44 tr_TR
dc.identifier.issue 5 tr_TR
dc.contributor.department Çankaya Üniversitesi, Mühendislik Fakültesi, Elektrik-Elektronik Mühendisliği Bölümü tr_TR


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