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Conducted Emi Performance Comparison Of Si And Sic Mosfets In A Ccm Boost Pfc Converter For MIL-STD-461F CE102

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dc.contributor.author Kavak, Halil
dc.contributor.author İskender, İres
dc.contributor.author Jahi, Amir
dc.date.accessioned 2024-03-01T07:04:04Z
dc.date.available 2024-03-01T07:04:04Z
dc.date.issued 2018
dc.identifier.citation Kavak, H.; İskender, İ.; Jahi, A. (2018). "Conducted Emi Performance Comparison Of Si And Sic Mosfets In A Ccm Boost Pfc Converter For MIL-STD-461F CE102", Poznan University Of Technology Academic Journals. tr_TR
dc.identifier.uri http://hdl.handle.net/20.500.12416/7407
dc.description.abstract This paper presents a comparison of conducted EMI performance of Si and SiC MOSFETs in a CCM PFC boost converter that is designed to meet CE102 of MIL-STD461F. EMI performance comparison is based on MOSFET of the PFC converter. That is, the power switch of the converter is the only parameter that is changed during tests. The boost diode is kept the same during the tests and the type of the boost diode is SiC. The paper shows the CE102 test results of Si and SiC MOSFETs without an EMI filter at the input side of CCM PFC boost converter. tr_TR
dc.language.iso eng tr_TR
dc.relation.isversionof 10.21008/j.1897-0737.2018.95.0009 tr_TR
dc.rights info:eu-repo/semantics/openAccess tr_TR
dc.subject CCM Boost Converter tr_TR
dc.subject Silicon tr_TR
dc.subject Silicon Carbide tr_TR
dc.subject Conducted EMI, CE102. tr_TR
dc.title Conducted Emi Performance Comparison Of Si And Sic Mosfets In A Ccm Boost Pfc Converter For MIL-STD-461F CE102 tr_TR
dc.type article tr_TR
dc.relation.journal Poznan University Of Technology Academic Journals tr_TR
dc.contributor.authorID 133746 tr_TR
dc.contributor.department Çankaya Üniversitesi, Mühendislik Fakültesi, Elektrik-Elektronik Mühendisliği Bölümü tr_TR


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