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Molecular dynamics of thermal vibration effects: Ar + Ni(100) collision system

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dc.contributor.author Hundur, Yakup
dc.contributor.author Güvenç, Büşra
dc.contributor.author Hippler, Rainer
dc.date.accessioned 2016-06-06T07:19:01Z
dc.date.available 2016-06-06T07:19:01Z
dc.date.issued 2010-04
dc.identifier.citation Hundur, Y., Güvenç, Z.B., Rainer, H. (2010). Molecular dynamics of thermal vibration effects: Ar + Ni(100) collision system. Communications In Nonlinear Science And Numerical Simulation, 15(4), 1103-1110. http://dx.doi.org/10.1016/j.cnsns.2009.05.031 tr_TR
dc.identifier.issn 1007-5704
dc.identifier.uri http://hdl.handle.net/20.500.12416/1023
dc.description.abstract In this work constant energy molecular dynamics simulations are achieved for investigating sputtering process of Ar + Ni(1 0 0) collision system. The Ni crystal is imitated by an embedded-atom potential, whereas the interaction between the projectile and the surface is modeled by re-parameterized ZBL potential. Seven hundred eighty-four Ar atoms carrying 20-50 eV are sent towards a Ni(1 0 0) surface at normal incidence. Each projectile meets with different initial coordinates (phase) of the nickel atoms because of thermal vibrations in the slab. Effects of the different initial phases of the surface are compared with the available theoretical and experimental data tr_TR
dc.language.iso eng tr_TR
dc.publisher Elsevier Science tr_TR
dc.relation.isversionof 10.1016/j.cnsns.2009.05.031 tr_TR
dc.rights info:eu-repo/semantics/closedAccess
dc.subject Molecular Dynamics tr_TR
dc.subject Thermal Vibration Effect tr_TR
dc.subject Threshold Energy Range tr_TR
dc.subject Collision tr_TR
dc.subject Ar tr_TR
dc.subject Ni tr_TR
dc.subject Sputtering tr_TR
dc.subject Atom and Molecule Irradiation Effects tr_TR
dc.subject Channeling Phenomena tr_TR
dc.subject Structure of Bulk Crystals tr_TR
dc.title Molecular dynamics of thermal vibration effects: Ar + Ni(100) collision system tr_TR
dc.type article tr_TR
dc.relation.journal Communications In Nonlinear Science And Numerical Simulation tr_TR
dc.contributor.authorID 29853 tr_TR
dc.identifier.volume 15 tr_TR
dc.identifier.issue 4 tr_TR
dc.identifier.startpage 1103 tr_TR
dc.identifier.endpage 1110 tr_TR
dc.contributor.department Çankaya Üniversitesi, Mühendislik Fakültesi, Elektronik ve Haberleşme Mühendisliği tr_TR


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