Yazar "Gasanly, N.M." için Ortak Dersler Bölümü listeleme

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Growth and characterization of NaBi(Mo0.5W0.5O4)2 single crystal: A promising material for optoelectronic applications

Işık, M.; Güler, İ.; Gasanly, N.M. (2023-03-15)

The structural and optical characteristics of NaBi(Mo0.5W0.5O4)2 single crystals grown by Czochralski method were investigated. X-ray diffraction (XRD) pattern exhibited four well-defined peaks related to tetragonal ...
Growth and temperature tuned band gap characteristics of NaBi(MoO4)2 single crystal

Isik, M.; Güler, İ.; Gasanly, N.M. (2023-02-01)

Structural and optical properties of double sodium-bismuth molybdate NaBi(MoO4)2 semiconductor compound was investigated by x-ray diffraction, Raman and transmission experiments. From the x-ray diffraction experiments, the ...
Temperature-dependent absorption edge and photoconductivity of Tl 2In2S3Se layered single crystals

Güler, İpek; Ambrico, M.; Ligonzo, T.; Gasanly, N.M. (2013-02-15)

Temperature variation of indirect band gap of Tl2In 2S3Se layered single crystals were obtained by means of absorption and photoconductivity measurements. The temperature coefficient of -7.1 × 10-4 eV/K from absorption ...

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