Konu "Semiconductors" için Ortak Dersler Bölümü listeleme

Toplam kayıt 4, listelenen: 1-4

Determination of trapping parameters of Tl2In2S3Se layered single crystal by thermoluminescence

Güler, İpek; Gasanly, Nizami (Wiley, 2018-04)

Thermoluminescence (TL) measurements are performed to evaluate the trap states in Tl2In2S3Se layered single crystals. TL experiments are conducted with varying temperature from 10 to 300 K and warming rates from 0.2 to 1.0 ...
Structural and Optical Properties of Ga2Se3 Crystals by Spectroscopic Ellipsometry

Güler, İpek; Işık, Mesut; Gasanly, Nizami Mamed; Gasanova, L. G.; Babayeva, Raziye (Springer, 2019-04)

Optical and crystalline structure properties of Ga2Se3 crystals were analyzed utilizing ellipsometry and x-ray diffraction (XRD) experiments, respectively. Components of the complex dielectric function (epsilon=epsilon(1)+i ...
Study of vibrational modes in (Ga2S3)(x) - (Ga2Se3)(1-x) mixed crystals by Raman and infrared reflection measurements

Erdemir, Işık Merda; Güler, İpek; Gasanly, Nizami Mamed (Elsevier, 2019-09)

Raman and infrared (IR) reflection characteristics were investigated in the frequency region of 100-450 cm(-1) for (Ga2S3)(x) - (Ga2Se3)(1-x) mixed crystals for compositions of x increasing from 0.0 to 1.0 by intervals of ...
Temperature and Excitation Intensity Tuned Photoluminescence In Ga0.75In0.25Se Crystals

Işık, M.; Güler, I.; Gasanlyc, N. M. (Elsevier Science BV, 2013-01)

Photoluminescence (PL) spectra of Ga0.75In0.25Se layered single crystals have been studied in the wavelength range of 580-670 nm and temperature range of 7-59 K. Two PL emission bands centered at 613 nm (2.02 eV, A-band) ...

Toplam kayıt 4, listelenen: 1-4

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