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Temperature and Excitation Intensity Tuned Photoluminescence In Ga0.75In0.25Se Crystals

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dc.contributor.author Işık, M.
dc.contributor.author Güler, I.
dc.contributor.author Gasanlyc, N. M.
dc.date.accessioned 2020-04-09T12:15:26Z
dc.date.available 2020-04-09T12:15:26Z
dc.date.issued 2013-01
dc.identifier.citation Isik, M.; Guler, I.; Gasanly, N. M. "Temperature and excitation intensity tuned photoluminescence in Ga0.75In0.25Se crystals", Optical Materials, Vol. 35, No. 3, pp. 414-418, (2013) tr_TR
dc.identifier.issn 0925-3467
dc.identifier.issn 1873-1252
dc.identifier.uri http://hdl.handle.net/20.500.12416/3012
dc.description.abstract Photoluminescence (PL) spectra of Ga0.75In0.25Se layered single crystals have been studied in the wavelength range of 580-670 nm and temperature range of 7-59 K. Two PL emission bands centered at 613 nm (2.02 eV, A-band) and 623 nm (1.99 eV, B-band) were revealed at T = 7K. The excitation laser intensity dependence of the emission bands have been studied in the 0.06-1.40 W cm(-2) range. Radiative transitions from shallow donor levels located at E-A = 0.11 and E-B = 0.15 eV below the bottom of conduction band to single shallow acceptor level located at 0.01 eV above the valence band are suggested to be responsible for the observed A- and B-bands. A simple model was proposed to interpret the recombination processes in Ga0.75In0.25Se single crystals. (c) 2012 Elsevier B.V. All rights reserved. tr_TR
dc.language.iso eng tr_TR
dc.publisher Elsevier Science BV tr_TR
dc.relation.isversionof 10.1016/j.optmat.2012.09.019 tr_TR
dc.rights info:eu-repo/semantics/closedAccess tr_TR
dc.subject Semiconductors tr_TR
dc.subject Optical Properties tr_TR
dc.subject Photoluminescence tr_TR
dc.subject Defect Levels tr_TR
dc.title Temperature and Excitation Intensity Tuned Photoluminescence In Ga0.75In0.25Se Crystals tr_TR
dc.type article tr_TR
dc.relation.journal Optical Materials tr_TR
dc.contributor.authorID 101531 tr_TR
dc.identifier.volume 35 tr_TR
dc.identifier.issue 3 tr_TR
dc.identifier.startpage 414 tr_TR
dc.identifier.endpage 418 tr_TR
dc.contributor.department Çankaya Üniversitesi, Ortak Dersler Bölümü, Temel Mühendislik Ana Bilim Dalı, Fizik Bilim Dalı tr_TR


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