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Compositional Dependence of Raman-Active Mode Frequencies and Line Widths in Tlıns2xse2(1-X) Mixed Crystals

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dc.contributor.author Güler, I.
dc.contributor.author Gasanly, N. M.
dc.contributor.author Korkmaz, F.
dc.date.accessioned 2020-05-03T20:53:48Z
dc.date.available 2020-05-03T20:53:48Z
dc.date.issued 2014-11-01
dc.identifier.citation Guler, I.; Gasanly, N. M., "Compositional Dependence of Raman-Active Mode Frequencies and Line Widths in Tlıns2xse2(1-X) Mixed Crystals", Applied Surface Science, 318, pp. 113-115, (2014). tr_TR
dc.identifier.issn 0169-4332
dc.identifier.issn 1873-5584
dc.identifier.uri http://hdl.handle.net/20.500.12416/3600
dc.description.abstract The Raman spectra of mixed crystals TlInS2xSe2(1-x) have been investigated in the composition range of 0.25 <= x <= 0.75 and in the high-frequency region of 250-350 cm(-1) at room temperature. It was observed that Raman-active mode frequencies decrease as the selenium atoms content increases in the mixed crystals. The effect of crystal disorder on the line broadening of three high-frequency modes is reported. (C) 2014 Elsevier B.V. All rights reserved. tr_TR
dc.language.iso eng tr_TR
dc.publisher Elsevier Science tr_TR
dc.relation.isversionof 10.1016/j.apsusc.2014.01.131 tr_TR
dc.rights info:eu-repo/semantics/closedAccess tr_TR
dc.subject Layered Crystals tr_TR
dc.subject Raman Line Widths tr_TR
dc.subject Crystal Disorder tr_TR
dc.title Compositional Dependence of Raman-Active Mode Frequencies and Line Widths in Tlıns2xse2(1-X) Mixed Crystals tr_TR
dc.type article tr_TR
dc.relation.journal Applied Surface Science tr_TR
dc.identifier.volume 318 tr_TR
dc.identifier.startpage 113 tr_TR
dc.identifier.endpage 115 tr_TR
dc.contributor.department Çankaya Üniversitesi, Mühendislik Fakültesi, Malzeme Bilimi ve Mühendisliği Bölümü tr_TR


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