DSpace@Çankaya

Thermoluminescence characterization of (Ga2Se3)(0.25) - (Ga2S3)(0.75) single crystal compounds

Basit öğe kaydını göster

dc.contributor.author Işık, M.
dc.contributor.author Güler, İpek
dc.contributor.author Gasanly, N. M.
dc.date.accessioned 2021-06-21T12:08:32Z
dc.date.available 2021-06-21T12:08:32Z
dc.date.issued 2020-03-15
dc.identifier.citation Işık, M.; Güler, İpek; Gasanly, N. M. (2020). "Thermoluminescence characterization of (Ga2Se3)(0.25) - (Ga2S3)(0.75) single crystal compounds", Materials Science in Semiconductor Processing, Vol. 108. tr_TR
dc.identifier.issn 1369-8001
dc.identifier.issn 1873-4081
dc.identifier.uri http://hdl.handle.net/20.500.12416/4850
dc.description.abstract Ga2Se3 and Ga2S3 compounds take attention due to their potential applications in photovoltaics. Defects and impurities may affect the quality of optoelectronic devices. Therefore, it is worthwhile to determine the parameters (activation energy, order of kinetics, frequency factor) of traps associated with the defects and/or impurities. The aim of the present paper is to investigate the trapping parameters of (Ga2Se3)(0.25) - (Ga2S3)(0.75) single crystal which is one of the member of (Ga2Se3)(x) - (Ga2S3)(1-x) mixed crystals. For this purpose, thermoluminescence (TL) experiments were performed on (Ga2Se3)(0.25) - (Ga2S3)(0.75) single crystals in the 10-300 K region. TL spectra were also recorded using various heating rates in between 0.2 and 1.0 K/s and stopping temperatures from 30 to 60 K to get the detailed information about the characteristics of the trapping parameters. TL glow curves exhibited the overlapped peaks. The stopping temperature experimental data indicated that traps present quasi-continuous distribution within the band gap. Initial rise method analyses were applied to get the activation energies of quasi-continuously distributed revealed traps. Thermal activation energies of distributed traps were found as increasing from 108 to 246 meV as stopping temperature was increased from 30 to 60 K. The structural characteristics (lattice constants and atomic compositions of constituent elements) of used compound were also reported in the present study. tr_TR
dc.language.iso eng tr_TR
dc.relation.isversionof 10.1016/j.mssp.2019.104875 tr_TR
dc.rights info:eu-repo/semantics/closedAccess tr_TR
dc.subject Ga2S3 tr_TR
dc.subject Ga2Se3 tr_TR
dc.subject Thermoluminescence tr_TR
dc.subject Defects tr_TR
dc.title Thermoluminescence characterization of (Ga2Se3)(0.25) - (Ga2S3)(0.75) single crystal compounds tr_TR
dc.type article tr_TR
dc.relation.journal Materials Science in Semiconductor Processing tr_TR
dc.contributor.authorID 101531 tr_TR
dc.identifier.volume 108 tr_TR
dc.contributor.department Çankaya Üniversitesi, Ortak Dersler Bölümü, Fizik Bilim Dalı tr_TR


Bu öğenin dosyaları:

Dosyalar Boyut Biçim Göster

Bu öğe ile ilişkili dosya yok.

Bu öğe aşağıdaki koleksiyon(lar)da görünmektedir.

Basit öğe kaydını göster