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Growth and characterization of NaBi(Mo0.5W0.5O4)2 single crystal: A promising material for optoelectronic applications

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dc.contributor.author Işık, M.
dc.contributor.author Güler, İ.
dc.contributor.author Gasanly, N.M.
dc.date.accessioned 2023-12-22T11:59:40Z
dc.date.available 2023-12-22T11:59:40Z
dc.date.issued 2023-03-15
dc.identifier.citation Işık,M.; Güler, I.; Gasanly, N.M. (2023). "Growth and characterization of NaBi(Mo0.5W0.5O4)2 single crystal: A promising material for optoelectronic applications", Materials Science in Semiconductor Processing, Vol.156. tr_TR
dc.identifier.issn 13698001
dc.identifier.uri http://hdl.handle.net/20.500.12416/6813
dc.description.abstract The structural and optical characteristics of NaBi(Mo0.5W0.5O4)2 single crystals grown by Czochralski method were investigated. X-ray diffraction (XRD) pattern exhibited four well-defined peaks related to tetragonal crystalline structure with a space group I41/a. Raman and infrared transmittance spectra were recorded to investigate vibrational properties of the compound. Room temperature transmission spectrum was measured to reveal band gap energy of the crystal. The derivative spectral and absorption coefficient analyses resulted in direct band gap energy of 3.19 and 3.18 eV, respectively. Urbach energy of the crystal was also determined as 0.17 eV from photon energy dependency of absorption coefficient. The structural and optical parameters obtained for NaBi(Mo0.5W0.5O4)2 were compared with the parameters of the NaBi(XO4)2 (X: Mo,W) compounds to understand the effect of the composition on the studied properties. The reported characteristics of NaBi(Mo0.5W0.5O4)2 point out that the compound has significant potential to be used in optoelectronic devices. tr_TR
dc.language.iso eng tr_TR
dc.relation.isversionof 10.1016/j.mssp.2022.107257 tr_TR
dc.rights info:eu-repo/semantics/closedAccess tr_TR
dc.subject NaBi(MoO4)2 tr_TR
dc.subject NaBi(WO4)2 tr_TR
dc.subject Optical Properties tr_TR
dc.subject Optoelectronic Applications tr_TR
dc.title Growth and characterization of NaBi(Mo0.5W0.5O4)2 single crystal: A promising material for optoelectronic applications tr_TR
dc.type article tr_TR
dc.relation.journal Materials Science in Semiconductor Processing tr_TR
dc.contributor.authorID 101531 tr_TR
dc.identifier.volume 156 tr_TR
dc.contributor.department Çankaya Üniversitesi, Ortak Dersler, Fizik Bilim Dalı tr_TR


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