Conducted Emi Performance Comparison Of Si And Sic Mosfets In A Ccm Boost Pfc Converter For MIL-STD-461F CE102

Kavak, Halil; İskender, İres; Jahi, Amir

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dc.contributor.author	Kavak, Halil
dc.contributor.author	İskender, İres
dc.contributor.author	Jahi, Amir
dc.date.accessioned	2024-03-01T07:04:04Z
dc.date.available	2024-03-01T07:04:04Z
dc.date.issued	2018
dc.identifier.citation	Kavak, H.; İskender, İ.; Jahi, A. (2018). "Conducted Emi Performance Comparison Of Si And Sic Mosfets In A Ccm Boost Pfc Converter For MIL-STD-461F CE102", Poznan University Of Technology Academic Journals.	tr_TR
dc.identifier.uri	http://hdl.handle.net/20.500.12416/7407
dc.description.abstract	This paper presents a comparison of conducted EMI performance of Si and SiC MOSFETs in a CCM PFC boost converter that is designed to meet CE102 of MIL-STD461F. EMI performance comparison is based on MOSFET of the PFC converter. That is, the power switch of the converter is the only parameter that is changed during tests. The boost diode is kept the same during the tests and the type of the boost diode is SiC. The paper shows the CE102 test results of Si and SiC MOSFETs without an EMI filter at the input side of CCM PFC boost converter.	tr_TR
dc.language.iso	eng	tr_TR
dc.relation.isversionof	10.21008/j.1897-0737.2018.95.0009	tr_TR
dc.rights	info:eu-repo/semantics/openAccess	tr_TR
dc.subject	CCM Boost Converter	tr_TR
dc.subject	Silicon	tr_TR
dc.subject	Silicon Carbide	tr_TR
dc.subject	Conducted EMI, CE102.	tr_TR
dc.title	Conducted Emi Performance Comparison Of Si And Sic Mosfets In A Ccm Boost Pfc Converter For MIL-STD-461F CE102	tr_TR
dc.type	article	tr_TR
dc.relation.journal	Poznan University Of Technology Academic Journals	tr_TR
dc.contributor.authorID	133746	tr_TR
dc.contributor.department	Çankaya Üniversitesi, Mühendislik Fakültesi, Elektrik-Elektronik Mühendisliği Bölümü	tr_TR